F2SC2655 Bipolar Transistor (BJT)
by Formosa Microsemi
| PD(W) | |
|---|---|
| hFEMax. | |
| hFEMin. | |
| CMax.(A) | |
| Polarity | |
| hFE@IC(mA) | |
| hFE@VCE(V) | |
| VCBOMax.(V) | |
| VCEOMax.(V) | |
| fTMin.(MHz) | |
| Package / Case | |
| Product Status | |
| VCE(sat)@IB(mA) | |
| VCE(sat)@IC(mA) | |
| VCE(sat)Max.(V) | |
| Device / IC Type | |
| AEC-Q101Qualified | |
| Manufacturer | Formosa Microsemi |
| Product Name | F2SC2655 Bipolar Transistor (BJT) |
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